Novel computing technologies that imitate the principles of biological neural systems may offer low power consumption along with distinct cognitive and learning advantages^{1, 2}. The development of reliable memristive devices capable of storing multiple states of information has opened up new applications such as neuromorphic circuits and adaptive systems^{3, 4}. At the same time, the explosive growth of the printed electronics industry has expedited the search for advanced memory materials suitable for manufacturing flexible devices⁵. Here, we demonstrate that solution-processed MoO_x/​MoS₂ and WO_x/​WS₂ heterostructures sandwiched between two printed ​silver electrodes exhibit an unprecedentedly large and tunable electrical resistance range from 10² to 10⁸ Ω combined with low programming voltages of 0.1–0.2 V. The bipolar resistive switching, with a concurrent capacitive contribution, is governed by an ultrathin (<3 nm) oxide layer. With strong nonlinearity in switching dynamics, different mechanisms of synaptic plasticity are implemented by applying a sequence of electrical pulses.

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