Structural and electrical transport properties of hexagonal 4H BaRu1−xMnxO3 perovskite
M. Mazaheria, S. Fallahia and M. Akhavan
, a, 
,
a Magnet Research Laboratory (MRL), Department of Physics, Sharif University of Technology, P.O. Box 11365-9161, Tehran, Iran
Received 3 November 2010;
revised 23 April 2011;
accepted 22 May 2011.
Available online 27 May 2011.
Abstract
In this paper, structural and electrical transport properties of hexagonal, 4H-type, BaRu1−xMnxO3 (x=0−0.3), synthesized by the solid-state reaction method at ambient pressure, have been presented. Electrical transport properties are measured over a temperature range of 10–300 K in the magnetic field up to 15 kOe. The low temperature resistivity 
shows a quadratic temperature dependence ρ(T)=ρ0+AT2 for the x=0 sample and a crossover from a T2 to a T1.5 temperature dependence, corresponding to the Fermi-liquid phase to a non-Fermi-liquid phase crossover, in the x=0.03 sample. Furthermore, Mn doping drives the system from the metallic state at x=0 to the insulating state x≥0.1, in which the x=0.3 sample shows a variable range hopping behavior below 100 K. At low temperature region, large magnetoresistance was observed for the samples with x=0.2 and 0.3.
