Abstract

Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS₂/In₂S₃ multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 °C for 30 min in nitrogen atmosphere and the annealing effect on structural, optical and photoelectrical properties of the film was investigated. X-ray diffraction (XRD) and optical absorption spectroscopy were used for structural and optical studies. Current–Voltage (I–V) measurements were performed in dark environment and under 15, 30 and 50 mW/cm² light intensity to investigate the photosensitivity of the structure. Also, the electrical resistivity of the film was determined in the temperature range of 300–470 K. It was found that annealing temperature drastically affects the structural, optical and photoelectrical properties of the CuInS₂/In₂S₃ films.