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Qili Chena, b, c, Chaoqun Tanga, , and Guang Zhengb, c
aDepartment of Physics, Huazhong University of Science and Technology, Wuhan 430074, PR China
bSchool of Mathematics and Physics, China University of Geosciences, Wuhan 430074, PR China
cInstitute of Material Modeling and Computational Physics, China University of Geosciences, Wuhan 430074, PR China
Available online 19 November 2008.
Abstract
In this study, the density functional theory (DFT) plane-wave pseudopotential method was employed to investigate TiO2 anatase (1 0 1) surfaces doped with oxygen vacancies and nitrogen atoms. The results demonstrate that the nitrogen doping is likely to reduce the bridging oxygen vacancy formation energy also the cost of substitution of oxygen atoms with nitrogen atoms is reduced in the presence of oxygen vacancies. Moreover, the nitrogen doping has little effect on the defective surface restructuring. Furthermore, by considering charge compensation, we focus on the electronic structures of the N-doped charge neutral surface. The results confirm that the mixing of N dopants induced states with original Ti 3d and O 2p valence band attributes to the band gap narrowing.
Keywords: Anatase (1 0 1) surface; Nitrogen doping; Electronic structure; First-principles calculation
PACS classification codes: 68.35.−p; 73.20.Hb; 31.15.Ew
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